RSS130N03 transistors 1/3 switching (30v, 13a) RSS130N03 z features 1) low on-resistance. 2) built-in g-s protection diode. 3) small and surface mount package (sop8). z application power switching, dc/dc converter. z structure silicon n-channel mos fet z external dimensions (units : mm) each lead has same dimensions sop8 5.0 0.2 0.2 0.1 6.0 0.3 3.9 0.15 0.5 0.1 ( 1 ) ( 4 ) ( 8 ) ( 5 ) max.1.75 1.27 0.15 0.4 0.1 1.5 0.1 0.1 z absolute maximum ratings (ta = 25 c) 30 20 13 52 1.6 6.4 2 150 ? 55 to + 150 v dss v gss p d tch v v a w c i d i dp a i s i sp a a tstg c symbol limits unit parameter ? pw 10 s, duty cycle 1% drain-source voltage storage temperature channel temperature total power dissipation (tc = 25 c ) source current (body diode) drain current gate-source voltage pulsed continuous pulsed continuous ? ? z equivalent circuit ? a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.use a protection circuit when the fixed voltage are exceeded. (1) source (2) source (3) source (4) gate (5) drain (6) drain (7) drain (8) drain (1) (2) (3) (8) (7) (6) (5) (1) (2) (3) (4) (4) ? 2 ? 2 body diode. (8) (7) (6) (5) ? 1 ? 1 esd protection diode. z thermal resistance (ta = 25 c) rth (ch-a) 62.5 c / w symbol limits unit parameter channel to ambient
RSS130N03 transistors 2/3 z electrical characteristics (ta = 25 c) a pf m ? s v a v pf pf ns ns ns ns nc nc nc v gs = 0v f = 1mhz v ds = 10v v gs = 10v i d = 6.5a, v dd 15v r l = 2.31 ? r gs = 10 ? v dd = 15v i d = 13a, v gs = 10v i d = 13a, v gs = 4.5v i d = 13a, v gs = 4v i d = 13a, v ds = 10v i d = 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = 30v, v gs = 0v v ds = 10v, i d = 1ma parameter test conditions unit min. typ. i gss i dss l y fs l c iss symbol c oss c rss t r t f q gd q gs q g v (br)dss v gs (th) r ds (on) ? ? ? ? ? ? ? ? ? t d (on) t d (off) ? pulsed static drain-source on-state resistance gate-drain charge gate-source charge total gate charge fall time turn-off delay time rise time turn-on delay time reverse transfer capacitance output capacitance input capacitance forward transfer admittance gate threshold voltage zero gate voltage drain current drain-source breakdown voltage gate-source leakage ?? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 30 5.9 7.4 7.9 2000 605 320 13 30 88 55 25 4.7 9.4 1.0 11 v gs = 5v i d =13a max. ? ? ? ? ? ? ? ? ? ? ? 8.1 10.3 11.0 10 1 2.5 35 z body diode characteristics (source-drain characteristics) (ta = 25 c) parameter test conditions v unit ?? min. typ. 1.2 max. i s = 6.4a, v gs = 0v v sd symbol ? pulsed forward voltage ?
RSS130N03 transistors 3/3 z electrical characteristic curves 10000 1000 100 10 0.1 1 10 100 fig.1 typical capacitance vs. drain-source voltage capacitance : c (pf) drain-source voltage : v ds (v) c iss c oss c rss 0.01 ta = 25 c f = 1mhz v gs = 0v 1 10 100 1000 0.1 1 10 switching time : t (ns) drain current : i d (a) fig.2 switching characteristics 0.01 100 10000 tf td(off) td(on) tr ta = 25 c v dd = 15v v gs = 10v r g = 10 ? pulsed 15 20 4 3 2 1 0 510 025 gate-source voltage: v gs (v) total gate change: qg (nc) fig.3 dynamic input characteristics ta = 25 c v dd = 15v i d = 13a r g = 10 ? pulsed 5 6 7 8 10 1 0.1 0.01 fig.4 typical transfer characteristics drein current : i d (a) 0 0.5 1.0 1.5 gate - source voltage : v gs (v) v ds = 10v pulsed 0.001 2.0 2.5 3.0 100 ta = 125 c 75 c ? 25 c 25 c 0 50 100 4 2 8 10 12 static drain-source on-state resistance : r ds(on) (m ? ) gate-source voltage : v gs (v) fig.5 static drain-source on-state resistance vs. gate-source voltage 0 6 ta=25 c pulsed i d = 13a i d = 6.5a 0.1 1 100 10 0.5 0 1.0 1.5 pulsed v gs = 0v ta =? 25 c 25 c 75 c 125 c 0.01 source-drain voltage : v sd (a) fig.6 source-current vs. source-drain voltage source current : is (a) 100 0.1 10 1 1 drain current : i d (a) fig.7 static drain-source on-state resistance vs. drain current (1) static drain-source on-state resistance : r ds(on) (m ? ) 10 100 ta = 125 c 75 c ? 25 c 25 c pulsed v gs = 10v 100 0.1 10 1 1 drain current : i d (a) fig.7 static drain-source on-state resistance vs. drain current (2) static drain-source on-state resistance : r ds(on) (m ? ) 10 100 ta = 125 c 75 c ? 25 c 25 c pulsed v gs = 4.5v 100 0.1 10 1 1 drain current : i d (a) fig.7 static drain-source on-state resistance vs. drain current (3) static drain-source on-state resistance : r ds(on) (m ? ) 10 100 ta = 125 c 75 c ? 25 c 25 c pulsed v gs = 4v
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